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Si7994DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0056 at V GS = 10 V
0.007 at V GS = 4.5 V
I D (A) a
60
60
Q g (Typ.)
24 nC
? Halogen-free
? TrenchFET ? Power MOSFET
APPLICATIONS
RoHS
COMPLIANT
? System Power DC/DC
? Notebook
PowerPAK SO-8
? Server
6.15 mm
1
S1
G1
5.15 mm
D 1
D 2
2
3
S2
G2
4
D1
8
7
D1
G 1
G 2
D2
6
5
D2
Bottom V ie w
Orderin g Information: Si7994DP-T1-GE3 (Lead (P b )-free and Halogen-free)
S 1
N -Channel MOSFET
S 2
N -Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
60 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 85 °C
T A = 25 °C
T A = 85 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
60 a
20 b, c
16 b, c
60
38
2.9 b, c
46
A
Maximum Power Dissipation
T C = 85 °C
T A = 25 °C
P D
29
3.5 b, c
W
T A = 85 °C
2.2 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum Unit
Maximum Junction-to-Ambient b, f t ≤ 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
26 35
2.2 2.7
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile ( http://www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69974
S-80895-Rev. B, 21-Apr-08
www.vishay.com
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